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ZVP4525E6

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT223 versions are also available.

Application(s)

Earth Recall and dialling switches

Electronic hook switches

High Voltage Power MOSFET Drivers

Telecom call routers

Solid state relays

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	250 V
\|V_GS\| (±V)	40 ±V
\|I_DS\| @T_A = +25°C (A)	0.197
P_D @T_A = +25°C (W)	1.1
R_DS(ON)Max@ V_GS(10V)(mΩ)	14000 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	18000 (@3.5V) mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	2.45 nC
C_ISS Typ (pF)	73 @ 25V pF

Technical Documents

SPICE Model

ZVP4525E6.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile