Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT26-Chip-Image.png12V, 9A, Gate Driver, SOT26
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The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate drivers capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Power MOSFET and IGBT Gate Driving in
| Category | Gate Driver Transistors |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN + PNP |
| VIN & VCC max (V) | 12 |
| I(source) typ (A) | 4.2 |
| @ IIN (mA) | 10 |
| I(sink) typ (A) | 2.2 |
| @ IIN 2 (mA) | 10 (mA) |
| IPK typ (A) | 9 A |
| @ IIN 2 (A) | 1 A |
| td(rise) typ (ns) | 1.3 ns |
| tr typ (ns) | 7.3 ns |
| td(fall) typ (ns) | 3 ns |
| tf typ (ns) | 11 ns |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |
