Inactive Datasheet Archive
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The ZXGD3109N8 is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a high voltage detector stage and gate driver. The detector monitors the voltage between the drain and the source of the MOSFET and if this voltage is less than the turn on threshold voltage of the controller a positive voltage is applied to the MOSFET’s Gate pin. As the load current decays to zero and the voltage between the drain and source of the MOSFET increases beyond the turn off threshold value MOSFET is rapidly turned off.
Intelligent features of this IC are the Minimum off time (TOFF) and Minimum on time (TON), these features blanks the noise generated during the turn on and turn off instances of the power FET. Light load detection (LLD) for improved efficiency at light and no load, where synchronous rectification is no more beneficial. Other features include, under voltage lock out (UVLO) and low turn off threshold voltage for improved efficiency.
Flyback Converters in:
Resonant Converters in:
Compliance (Only Automotive supports PPAP) | No |
---|---|
Drain Voltage VD (V) | 200 |
Gate Sink Current ISINK (A) | 4 |
Gate Source Current ISOURCE (A) | 2 |
Mode of Operation | DCM/CrCM |
Proportional Gate Drive Control (Y|N) | No |
AEC Qualified | No |
Quiescent Current (µA) | 1.3 |
Supply Voltage VCC (V) | 12 |
Switching Frequency (MHz) | 500 |
Turn-Off Delay Time TOFF (ns) | 30 |
Turn-OffThresholdVoltage (mV) | 4 |
Turn-On Time TON (ns) | 30 |