60V SO8 Complementary enhancement mode MOSFET H-Bridge
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AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | 2N2P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 1.39, 1.28 |
PD @TA = +25°C (W) | 0.87 |
RDS(ON)Max@ VGS(10V)(mΩ) | 250, 400 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 350, 600 mΩ |
QG Typ @ |VGS| = 10V (nC) | 3.2, 5.1 nC |
CISS Typ (pF) | 166, 141 pF |
CISS Condition @|VDS| (V) | 40, 50 V |