N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high-efficiency, low-voltage, power-management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 1.6 |
PD @TA = +25°C (W) | 1.1 |
RDS(ON)Max@ VGS(10V)(mΩ) | 230 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 300 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 5 (@5V) nC |
QG Typ @ |VGS| = 10V (nC) | 9.2 nC |
CISS Typ (pF) | 497 pF |