Diodes Incorporated — Analog and discrete power solutions
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ZXMN6A09GQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Voltage
  • Low On-Resistance
  • Fast Switching Speed
  • Low Gate Drive
  • Low Threshold
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The ZXMN6A09GQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Disconnect Switches
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 7.5
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 40 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 60 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 12.4 nC
QG Typ @ |VGS| = 10V (nC) 24.2 nC
CISS Typ (pF) 1407 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf