P-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.7 |
PD @TA = +25°C (W) | 0.625 |
RDS(ON)Max@ VGS(10V)(mΩ) | 1000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 1450(@6V) mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 4.5V (nC) | 1.8 (@5V) nC |
QG Typ @ |VGS| = 10V (nC) | 3.5 nC |
CISS Typ (pF) | 141 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2376 | 2018-11-30 | 2019-03-01 | Addition of A Passivation Layer Over The Top Metal of The Die |