P-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 4.3 |
| PD @TA = +25°C (W) | 2 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 125 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 190 mΩ |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 9 nC |
| QG Typ @ |VGS| = 10V (nC) | 17.7 nC |
| CISS Typ (pF) | 637 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2376 | 2018-11-30 | 2019-03-01 | Addition of A Passivation Layer Over The Top Metal of The Die |
