PNP, 120V, 0.8A, SOT89
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120V PNP Silicon Transistor in SOT89
| Category | Medium Power Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | PNP |
| VCEO, VCES (V) | 120 |
| IC (A) | 0.8 |
| ICM (A) | 3 |
| PD (W) | 1.5 |
| hFE (Min) | 120 |
| hFE (@ IC) (A) | 0.1 |
| hFE(Min 2) | - |
| hFE (@ IC2) (A) | - |
| VCE(sat) Max (mV) | 1000 |
| VCE(SAT) (@ IC/IB) (A/mA) | 0.5/50 |
| VCE(sat) (Max.2) (mV) | - |
| VCE(sat) (@ IC/IB2) (A/mA) | - |
| fT (MHz) | 160 |
| RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2313 | 2019-10-21 | 2020-01-21 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion to Copper Bond Wire, and Qualification of Additional Die Passivation Layer on Select Products |
| PCN-2344 INFORMATIONAL | 2018-05-24 | 2018-06-24 | Carrier tape orientation |
| PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |
| PCN-2324 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices |
