NPN, 30V, 2A, SOT89
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| Category | Medium Power Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN |
| VCEO, VCES (V) | 30 |
| IC (A) | 2 |
| ICM (A) | 4 |
| PD (W) | 2 |
| hFE (Min) | 270 |
| hFE (@ IC) (A) | 0.2 |
| hFE(Min 2) | - |
| hFE (@ IC2) (A) | - |
| VCE(sat) Max (mV) | 370 |
| VCE(SAT) (@ IC/IB) (A/mA) | 1.5/75 |
| VCE(sat) (Max.2) (mV) | - |
| VCE(sat) (@ IC/IB2) (A/mA) | - |
| fT (MHz) | 240 |
| RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2313 | 2019-10-21 | 2020-01-21 | Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Conversion to Copper Bond Wire, and Qualification of Additional Die Passivation Layer on Select Products |
| PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |
