Diodes Incorporated — Analog and discrete power solutions
SO 8

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APR3415B

DCM mode only,co-packaging 17mohm MOS for up to 5V2A application

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Description

The N-Channel MOSFET is optimized for low gate charge, low RDS(ON), fast switching speed and body diode reverse recovery performance.

The synchronous rectification can effectively reduce the secondary side rectifier power dissipation and provide high performance solution. By sensing MOSFET drain-to-source voltage, APR3415B can output ideal drive signal with less external components. It can provide high performance solution for 5V output voltage application.

Same as AP4341, APR3415B detects the output voltage and provides a periodical signal when the output voltage is lower than a certain threshold. By fast response to secondary side voltage, APR3415B can effectively improve the transient performance of primary side control system.

The APR3415B is available in SO-8 package.

Feature(s)

  • Synchronous Rectification for DCM Operation Flyback
  • Eliminate Resonant Ring Interference
  • Fast Detector of Supply Voltages
  • Fewest External Components

Application(s)

  • Adapters/Chargers for Cell/Cordless Phones, ADSL Modems, MP3 and Other Portable Apparatus
  • Standby and Auxiliary Power Supplies

Product Specifications

Product Parameters

Operation Mode DCM
No-loadTriggerVoltage (V) 5.2 V
VCC Maximum Rating 7.5
OperatingCurrent (µA) 100 µA
Turn-OffThresholdVoltage (mV) -12.5 mV
Turn-OffDelay (ns) 100 ns
Internal MOSFETDrain Rating (V) 50 V
Internal MOSFET Rds(on)(MΩ) 17
Release Date 201405

Related Content

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Technical Documents

Evaluation Boards and User Guides

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2353 2018-06-12 2018-09-12 Qualification of Alternate Wafer Source for MOSFET Die used in Select Analog Products