Diodes Incorporated — Analog and discrete power solutions
X2 DFN0806 3

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X2-DFN0806-3.png
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BC847BFAQ

NPN, 45V, 0.1A, DFN0806-3

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 45V
  • IC = 100mA High Collector Current
  • PD = 435mW Power Dissipation
  • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23
  • 0.4mm Height Package Minimizing Off-Board Profile

Product Specifications

Product Parameters

Category Small Signal Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 45
IC (A) 0.1
ICM (A) 0.2
PD (W) 0.435
hFE (Min) 200
hFE (@ IC) (A) 0.002
hFE (@ IC2) (A) -
VCE(sat) Max (mV) 125
VCE(SAT) (@ IC/IB) (A/mA) 0.01/0.5
VCE(sat) (Max.2) (mV) 300
VCE(sat) (@ IC/IB2) (A/mA) 0.1/5
fT (MHz) 170
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC