Diodes Incorporated — Analog and discrete power solutions
SOT363

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SOT363.png
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BC856ASQ

Dual PNP, 65V, 0.1A, SOT363

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > -65V
  • IC = -100mA High Collector Current
  • Complementary NPN Types Available (BC846AS)
  • Ideally Suited for Automatic Insertion
  • For Switching and AF Amplifier Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Application(s)

  • Body Control Module

Product Specifications

Product Parameters

Category Small Signal Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP + PNP
VCEO, VCES (V) 65
IC (A) 0.1
ICM (A) 0.2
PD (W) 0.2
hFE (Min) 125
hFE (@ IC) (A) 0.002
hFE (@ IC2) (A) -
VCE(sat) Max (mV) 300
VCE(SAT) (@ IC/IB) (A/mA) 0.01/0.5
VCE(sat) (Max.2) (mV) 650
VCE(sat) (@ IC/IB2) (A/mA) 0.1/5
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)