Dual PNP, 65V, 0.1A, SOT363
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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Category | Small Signal Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Automotive |
Polarity | PNP + PNP |
VCEO, VCES (V) | 65 |
IC (A) | 0.1 |
ICM (A) | 0.2 |
PD (W) | 0.2 |
hFE (Min) | 125 |
hFE (@ IC) (A) | 0.002 |
hFE (@ IC2) (A) | - |
VCE(sat) Max (mV) | 300 |
VCE(SAT) (@ IC/IB) (A/mA) | 0.01/0.5 |
VCE(sat) (Max.2) (mV) | 650 |
VCE(sat) (@ IC/IB2) (A/mA) | 0.1/5 |
fT (MHz) | 100 |
RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2462 | 2020-05-08 | 2021-04-11 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive) |