Diodes Incorporated — Analog and discrete power solutions
Back to Transistor (BJT) Master Table

BCP5610Q

NPN, 80V, 1A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) < 500mV @ 0.5A

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2
hFE (Min) 63
hFE (@ IC) (A) 0.15
hFE(Min 2) 25
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 150
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC