Diodes Incorporated — Analog and discrete power solutions
Back to BCP5610Q

BCP5610Q

NPN, 80V, 1A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) < 500mV @ 0.5A

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

Category

Medium Power Transistor

Polarity

NPN

RCE(sat) (mΩ)

-

VCEO, VCES (V)

80

IC (A)

1

ICM (A)

2

PD (W)

2

hFE (Min)

63

hFE (@ IC) (A)

0.15

hFE(Min 2)

25

hFE (@ IC2) (A)

0.5

VCE(sat) Max (mV)

500

VCE(SAT) (@ IC/IB) (A/mA)

0.5/50

VCE(sat) (Max.2) (mV)

-

VCE(sat) (@ IC/IB2) (A/mA)

-

fT (MHz)

150

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2768 2025-12-10 2026-03-10 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) along with New Internal Wafer Source (OFAB) and Shanghai Assembly and Test Site (SAT) as Additional Assembly & Test (A/T) Sites with Standardization of Assembly Bill of Materials, and Change of Mold Compound Type as well as Die Attach Material at Currently Qualified A/T Site for Select Automotive Products
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products