BCP5616Q

NPN, 80V, 1A, SOT223

Datasheet

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

BVCEO > 45V & 80V
IC = 1A Continuous Collector Current
ICM = 2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Complementary PNP Type: BCP5316Q
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
The BCP5416Q and BCP5616Q are suitable for automotive applications requiring specific change control; these parts are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

Medium Power Switching or Amplification Applications
AF Drivers and Output Stages Mechanical Data

Product Specifications

Product Parameters

Category	Medium Power Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	NPN
VCEO, VCES (V)	80
IC (A)	1
ICM (A)	2
PD (W)	2
hFE (Min)	100
hFE (@ IC) (A)	0.15
h_FE(Min 2)	25
hFE (@ IC2) (A)	0.5
VCE(sat) Max (mV)	500
V_CE(SAT) (@ IC/IB) (A/mA)	0.5/50
VCE(sat) (Max.2) (mV)	-
VCE(sat) (@ IC/IB2) (A/mA)	-
fT (MHz)	150
RCE(sat) (mΩ)	-

Technical Documents

SPICE Model

BCP5616Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2382	2018-10-17	2019-01-17	Qualification of Additional Assembly and Test (A/T) site, Conversion to Palladium Coated Copper Bond Wire with Modified Top Metal Composition and Thickness, New Lead Frame Type, New Die Attach Material and New Molding Compound for Part Numbers BCP5616QTA and BCP5616QTC