N-CHANNEL ENHANCEMENT MODE MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 4.2 |
PD @TA = +25°C (W) | 0.78 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 25 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 29 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 37 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 0.9 V |
QG Typ @ |VGS| = 4.5V (nC) | 9.6 nC |
CISS Typ (pF) | 829.9 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |