N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Compliance (Only Automotive supports PPAP) | Standard |
---|---|
CISS Condition @|VDS| (V) | 50 |
CISS Typ (pF) | 886 |
Compliance (Only Automotive(Q) supports PPAP) | Standard |
ESD Diodes (Y|N) | No |
|IDS| @TA = +25°C (A) | 0.7 |
|IDS| @TC = +25°C (A) | 5.5 |
PD @TA = +25°C (W) | 1.78 |
PD @TC = +25°C (W) | 125 |
Polarity | N |
QG Typ @ |VGS| = 10V (nC) | 25 |
AEC Qualified | No |
RDS(ON)Max@ VGS(10V)(mΩ) | 1400 |
|VDS| (V) | 650 |
|VGS| (±V) | 30 |
|VGS(TH)| Max (V) | 4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
PCN-2475 | 2020-08-06 | 2020-11-06 | Qualification of Assembly & Test Site Transfer for Select Discrete Products |