Diodes Incorporated — Analog and discrete power solutions
SOT363

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DMMT3904WQ

Dual NPN, 40V, 0.2A, SOT363

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Feature(s)

  • BVCEO > 40V
  • IC = 200mA High Collector Current
  • Pair of NPN Transistors that are Intrinsically Matched (Note 1)
  • 2% Matching on Current Gain (hFE)
  • 2mV Matching on Base-Emitter Voltage (VBE)
  • Fully Internally Isolated in a Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
  • Halogen and Antimony Free. "Green" Device (Note 4)
  • The DIODES™ DMMT3904WQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • Current mirrors
  • Differential and instrumentation amplifiers
  • Comparators

Product Specifications

Product Parameters

Category Small Signal Transistor (Matched hFE VCE(sat) & VBE)
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + NPN
VCEO, VCES (V) 40
IC (A) 0.2
PD (W) 0.2
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 60
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 300
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 300

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)