Diodes Incorporated — Analog and discrete power solutions
SOT23

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SOT23.png
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DMN30H4D1S (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 174
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 0.43
PD @TA = +25°C (W) 0.43
Polarity N
QG Typ @ |VGS| = 10V (nC) 4.8
AEC Qualified No
RDS(ON)Max@ VGS(10V)(mΩ) 4000
RDS(ON)Max@ VGS(4.5V)(mΩ) 5000
|VDS| (V) 300
|VGS| (±V) 20
|VGS(TH)| Max (V) 3

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2593 2022-11-02 2023-05-02 Device End of Life (EOL)
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products