N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 30 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 1.3 |
PD @TA = +25°C (W) | 1.32 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 460 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 560 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 1800 mΩ |
|VGS(TH)| Min (V) | 0.4 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.07 nC |
CISS Typ (pF) | 15.6 pF |
CISS Condition @|VDS| (V) | 16 V |