P-Channel Enhancement Mode MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 4.7 |
| |IDS| @TC = +25°C (A) | - |
| PD @TA = +25°C (W) | 1.8 |
| PD @TC = +25°C (W) | - |
| RDS(ON)Max@ VGS(10V)(mΩ) | - mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 54 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 69 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 90 mΩ |
| |VGS(TH)| Min (V) | 0.3 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 10.2 nC |
| QG Typ @ |VGS| = 10V (nC) | - nC |
| CISS Typ (pF) | 915 pF |
| CISS Condition @|VDS| (V) | 10 V |
