Diodes Incorporated — Analog and discrete power solutions
X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

X2-DFN1006-3.png
Back to MOSFET Master Table

DMP22D6UFB4Q

20V P-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Footprint of Just 0.6mm2 – 13 Times Smaller than SOT23
  • 4mm Profile – Ideal for Low Profile Applications
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMP22D6UFB4Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Portable electronics

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 1
PD @TA = +25°C (W) 1
RDS(ON)Max@ VGS(4.5V)(mΩ) 1900 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2400 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3400 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
CISS Typ (pF) 22.2 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf