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DMT26M0LDG

Asymmetric Dual N-Channel MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Power-management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	25 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	11.6, 20.1
P_D @T_A = +25°C (W)	1.24
R_DS(ON)Max@ V_GS(10V)(mΩ)	6, 2 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	7.5, 3.1 mΩ
\|V_GS(TH)\| Min (V)	0.8, 1.1 V
\|V_GS(TH)\| Max (V)	2.2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7.2, 26.7 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	15.9, 57.4 nC
C_ISS Typ (pF)	1010, 4016 pF
C_ISS Condition @\|V_DS\| (V)	13 V

Technical Documents

SPICE Model

DMT26M0LDG.spice.txt

Recommended Soldering Techniques

TN1.pdf