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DMTH10H030LK3 (NRND)

NRND = Not Recommended for New Design

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON) – Minimises Power Losses
Low Q_G – Minimises Switching Losses

Application(s)

Power Management Functions
DC-DC Converters
Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Condition @\|V_DS\| (V)	50
C_ISS Typ (pF)	1871
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_C = +25°C (A)	28
P_D @T_A = +25°C (W)	3.5
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	33.3
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V)(mΩ)	30
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	45 (@6V)
\|V_DS\| (V)	100
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	3.5

Technical Documents

SPICE Model

DMTH10H030LK3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2347	2018-05-22	2018-11-22	Device End of Life (EOL)