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DMTH31M1LPSWQ

30V +175°C N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Thermally Efficient Package-Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses < 1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH31M1LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Body control electronics
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 40
|IDS| @TC = +25°C (A) 130
PD @TA = +25°C (W) 3
RDS(ON)Max@ VGS(10V)(mΩ) 0.95 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 1.5 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.3 V
QG Typ @ |VGS| = 4.5V (nC) 39 nC
QG Typ @ |VGS| = 10V (nC) 86 nC
CISS Typ (pF) 5938 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf