30V +175°C N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and load switches.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 40 |
|IDS| @TC = +25°C (A) | 130 |
PD @TA = +25°C (W) | 3 |
RDS(ON)Max@ VGS(10V)(mΩ) | 0.95 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 1.5 mΩ |
|VGS(TH)| Min (V) | 1.3 V |
|VGS(TH)| Max (V) | 2.3 V |
QG Typ @ |VGS| = 4.5V (nC) | 39 nC |
QG Typ @ |VGS| = 10V (nC) | 86 nC |
CISS Typ (pF) | 5938 pF |
CISS Condition @|VDS| (V) | 15 V |