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DMTH45M5SPSW

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes Power Losses
  • Wettable Flank for Improved Optical Inspection
  • Fast Switching Speed
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMTH45M5SPSWQ)

Application(s)

  • High-frequency switching
  • Synchronous rectification
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 86
PD @TA = +25°C (W) 3.5
PD @TC = +25°C (W) 72
RDS(ON)Max@ VGS(10V)(mΩ) 5.5 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 3.5 V
QG Typ @ |VGS| = 10V (nC) 13.2 nC
CISS Typ (pF) 1083 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2628 2023-05-11 2023-08-11 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products