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DSS3515MQ

PNP, 15V, 0.5A, DFN1006-3

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

Feature(s)

  • BVCEO > -15V
  • IC = -500mA High Collector Current
  • ICM = -1A Peak Pulse Current
  • PD = 1000mW Power Dissipation
  • Low Collector-Emitter Saturation Voltage, VCE(SAT)
  • 0.60mm2 Package Footprint, 13 Times Smaller than SOT23
  • 0.5mm Height Package Minimizing Off-Board Profile
  • Complementary NPN Type DSS2515M
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 15
IC (A) 0.5
ICM (A) 1
PD (W) 0.4
hFE (Min) 150
hFE (@ IC) (A) 0.1
hFE(Min 2) 90
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 25
VCE(SAT) (@ IC/IB) (A/mA) 0.01/0.5
VCE(sat) (Max.2) (mV) 250
VCE(sat) (@ IC/IB2) (A/mA) 0.5/50
fT (MHz) 340
RCE(sat) (mΩ) 500

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC