Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

U-DFN2020-6-Type-F.png
Back to Transistor (BJT) Master Table

DSS4160FDBQ

Dual NPN, 60V, 1A, DFN2020-6

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 60V
  • IC = 1A High Continuous Collector Current
  • RCE(sat) = 180mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(sat) < 220mV @ 1A
  • PD up to 2.47W for Power-Demanding Applications
  • RθJA Efficient, 40% Lower than SOT26
  • Low Profile 0.6mm High Package for Thin Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DSS4160FDBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load switches
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + NPN
VCEO, VCES (V) 60
IC (A) 1
ICM (A) 1.5
PD (W) 1.6
hFE (Min) 290
hFE (@ IC) (A) 0.1
hFE(Min 2) 150
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 120
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 240
VCE(sat) (@ IC/IB2) (A/mA) 1/50
fT (MHz) 175
RCE(sat) (mΩ) 180

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf