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DSS60601MZ4Q

NPN, 60V, 6A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 60V
  • IC = 6A High Continuous Current
  • ICM = 12A Peak Pulse Current
  • Low Saturation Voltage VCE(SAT) < 60mV @ 1A
  • Complementary PNP Type: DSS60600MZ4
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 60
IC (A) 6
ICM (A) 12
PD (W) 2
hFE (Min) 120
hFE (@ IC) (A) 1
hFE(Min 2) 50
hFE (@ IC2) (A) 6
VCE(sat) Max (mV) 60
VCE(SAT) (@ IC/IB) (A/mA) 1/100
VCE(sat) (Max.2) (mV) 220
VCE(sat) (@ IC/IB2) (A/mA) 3/60
fT (MHz) 100
RCE(sat) (mΩ) 40

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC