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DXT2011P5Q

NPN, 100V,6A, PowerDI5

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This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications.

BVCEO > 100V
IC = 6A High Continuous Collector Current
ICM = 10A Peak Collector Current
PD up to 3.2W
43% Smaller than SOT223; 60% Smaller than TO252
Maximum Height just 1.1mm
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DXT2011P5Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Category	Low Saturation Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	NPN
VCEO, VCES (V)	100
IC (A)	6
ICM (A)	10
PD (W)	3.2
hFE (Min)	100
hFE (@ IC) (A)	2
h_FE(Min 2)	30
hFE (@ IC2) (A)	5
VCE(sat) Max (mV)	65
V_CE(SAT) (@ IC/IB) (A/mA)	1/100
VCE(sat) (Max.2) (mV)	125
VCE(sat) (@ IC/IB2) (A/mA)	2/100
fT (MHz)	130
RCE(sat) (mΩ)	-

SPICE Model

DXT2011P5Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile