Diodes Incorporated
Back to Transistor (BJT) Master Table

DXTN06080BFG

NPN, 80V, 1A, PowerDI3333-8

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 80V
  • Small Form Factor Thermally Efficient Package. Enables Higher Density End Products
  • IC = 1A Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
  • Complementary PNP Types: DXTP06080BFG
  • Wettable Flank For Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.15
hFE(Min 2) 40
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 250
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 0.8/50
fT (MHz) 130

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC