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DXTN58100CFDB

NPN, 100V, 4A, DFN2020-3

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Description

100V NPN LOW SATURATION TRANSISTOR IN U-DFN2020-3

Feature(s)

  • BVCEO > 100V
  • hFE Specified up to 4A for High Current Gain Hold Up
  • Low Profile 0.6mm High Package for Thin Applications
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A
    listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC Converters
  • Charging Circuits
  • Motor Control
  • Power Switches

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 100
IC (A) 4
ICM (A) 6
PD (W) 1.25
hFE (Min) 180
hFE (@ IC) (A) 0.5
hFE(Min 2) 80
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 45
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) 260
VCE(sat) (@ IC/IB2) (A/mA) 4/400
fT (MHz) 150
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products