PNP, 40V, 3A, PowerDI3333-8
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40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8
• BVCEO > -40V
• Small Form Factor Thermally Efficient Package.
• Enables Higher Density End Products
• IC = -3A High Continuous Current
• ICM = -6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < -400mV @ -1A
• Minimum hFE 200 @ IC=-1A
• Rated to +175°C—Ideal For High Temperature Environment
• Wettable Flank For Improved Optical Inspection
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• High Side Switch
• Low Drop Out Regulator
• MOSFET or IGBT Gate Driving
| Category | Medium Power Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | PNP |
| VCEO, VCES (V) | 40 |
| IC (A) | 3 |
| ICM (A) | 6 |
| PD (W) | 2.3 |
| hFE (Min) | 250 |
| hFE (@ IC) (A) | 0.5 |
| hFE(Min 2) | 150 |
| hFE (@ IC2) (A) | 2 |
| VCE(sat) Max (mV) | 200 |
| VCE(SAT) (@ IC/IB) (A/mA) | 0.5/5 |
| VCE(sat) (Max.2) (mV) | 500 |
| VCE(sat) (@ IC/IB2) (A/mA) | 2/50 |
| fT (MHz) | 100 |
