NPN, 160V, 0.6A, SOT223
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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
| Category | High Voltage Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Automotive |
| Polarity | NPN |
| VCEO, VCES (V) | 160 |
| IC (A) | 0.6 |
| ICM (A) | 1 |
| PD (W) | 2 |
| hFE (Min) | 80 |
| hFE (@ IC) (A) | 0.01 |
| hFE(Min 2) | 30 |
| hFE (@ IC2) (A) | 0.05 |
| VCE(sat) Max (mV) | 150 |
| VCE(SAT) (@ IC/IB) (A/mA) | 0.01/1 |
| VCE(sat) (Max.2) (mV) | 200 |
| VCE(sat) (@ IC/IB2) (A/mA) | 0.05/5 |
| fT (MHz) | 100 |
| RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2462 | 2020-05-08 | 2021-04-11 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive) |
