PNP, 40V, 1A, SOT89
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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.
Category | Medium Power Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Automotive |
Polarity | PNP |
VCEO, VCES (V) | 40 |
IC (A) | 1 |
ICM (A) | 2 |
PD (W) | 1 |
hFE (Min) | 250 |
hFE (@ IC) (A) | 0.5 |
hFE(Min 2) | 160 |
hFE (@ IC2) (A) | 1 |
VCE(sat) Max (mV) | 200 |
VCE(SAT) (@ IC/IB) (A/mA) | 0.1/1 |
VCE(sat) (Max.2) (mV) | 500 |
VCE(sat) (@ IC/IB2) (A/mA) | 1/100 |
fT (MHz) | 150 |
RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |