FZT789AQ

PNP, 25V, 3A, SOT223

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This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

BV_CEO > -25V
I_C = -3A High Continuous Current
Low Saturation Voltage V_CE(sat)< -250mV @ -1A
R_CE(sat)= 93mΩ for a Low Equivalent On-Resistance
h_FE Specified up to -6A for a High Gain Hold-Up
Complementary NPN Type: DIODES™ FZT689B
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DIODES™ FZT789AQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

Product Specifications

Category	Medium Power Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	PNP
VCEO, VCES (V)	25
IC (A)	3
ICM (A)	6
PD (W)	2
hFE (Min)	300
hFE (@ IC) (A)	0.01
h_FE(Min 2)	100
hFE (@ IC2) (A)	6
VCE(sat) Max (mV)	250
V_CE(SAT) (@ IC/IB) (A/mA)	1/10
VCE(sat) (Max.2) (mV)	450
VCE(sat) (@ IC/IB2) (A/mA)	2/20
fT (MHz)	100
RCE(sat) (mΩ)	93

SPICE Model

FZT789AQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile