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FZT956Q

PNP, 200V, 2A, SOT223

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Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications

Feature(s)

  • BVCEO > -200V
  • IC = -2A High Continuous Collector Current
  • IC = -5A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < -165mV @ -1A
  • hFE Specified up to -5A for a High Gain Hold-Up
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ FZT956Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity PNP
VCEO, VCES (V) 200
IC (A) 2
ICM (A) 5
PD (W) 3
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 50
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 165
VCE(SAT) (@ IC/IB) (A/mA) 60
VCE(sat) (Max.2) (mV) 1/100
VCE(sat) (@ IC/IB2) (A/mA) 0.1/10
fT (MHz) 110

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC