Diodes Incorporated — Analog and discrete power solutions
SOT23

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SOT23.png
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MMBT5401

PNP, 150V, 0.6A, SOT23

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Feature(s)

  • Epitaxial Planar Die Construction
  • Complementary NPN Type - MMBT5551
  • Ideal for Low Power Amplification and Switching
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (MMBT5401Q)

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity PNP
VCEO, VCES (V) 150
IC (A) 0.6
ICM (A) -
PD (W) 0.31
hFE (Min) 60
hFE (@ IC) (A) 0.01
hFE(Min 2) 50
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2632 2023-06-13 2023-09-11 Addition of A Passivation Layer Over The Top Metal of The Die for Select BJT Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site