Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

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MMBT5401Q

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Datasheet

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Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.

Feature(s)

Epitaxial Planar Die Construction
Complementary NPN Type - MMBT5551Q
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The MMBT5401Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category	High Voltage Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	PNP
VCEO, VCES (V)	150
IC (A)	0.6
ICM (A)	-
PD (W)	0.31
hFE (Min)	60
hFE (@ IC) (A)	0.01
h_FE(Min 2)	50
hFE (@ IC2) (A)	0.05
VCE(sat) Max (mV)	200
V_CE(SAT) (@ IC/IB) (A/mA)	0.01/1
VCE(sat) (Max.2) (mV)	500
VCE(sat) (@ IC/IB2) (A/mA)	0.05/5
fT (MHz)	100
RCE(sat) (mΩ)	-

Technical Documents

SPICE Model

MMBT5401Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2462	2020-05-08	2021-04-11	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)