Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT23.pngNPN, 160V, 0.6A, SOT23
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| Category | High Voltage Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN |
| VCEO, VCES (V) | 160 |
| IC (A) | 0.6 |
| ICM (A) | - |
| PD (W) | 0.3 |
| hFE (Min) | 80 |
| hFE (@ IC) (A) | 0.01 |
| hFE(Min 2) | 30 |
| hFE (@ IC2) (A) | 0.05 |
| VCE(sat) Max (mV) | 150 |
| VCE(SAT) (@ IC/IB) (A/mA) | 0.01/1 |
| VCE(sat) (Max.2) (mV) | 200 |
| VCE(sat) (@ IC/IB2) (A/mA) | 0.05/5 |
| fT (MHz) | 100 |
| RCE(sat) (mΩ) | - |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
| PCN-2632 | 2023-06-13 | 2023-09-11 | Addition of A Passivation Layer Over The Top Metal of The Die for Select BJT Products |
| PCN-2461 | 2020-05-08 | 2021-04-05 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site |
