NPN, 30V, 0.3A, SOT23
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
Category | Darlington Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Standard |
Polarity | NPN |
VCEO, VCES (V) | 30 |
IC (A) | 0.3 |
PD (W) | 0.3 |
hFE (Min) | 10000 |
hFE (@ IC) (A) | 0.01 |
hFE(Min 2) | 20000 |
hFE (@ IC2) (A) | 0.1 |
VCE(sat) Max (mV) | 1500 |
VCE(SAT) (@ IC/IB) (A/mA) | 0.1/0.1 |
fT (MHz) | 125 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
PCN-2330 | 2018-03-29 | 2018-07-29 | Qualification of Additional A/T site and Conversion to Palladium Coated Copper Bond Wire on Select Discrete Products |