Diodes Incorporated — Analog and discrete power solutions
SOT563

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SOT563.png
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MMDT3904VC

Dual NPN, 40V, 0.2A, SOT563

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Feature(s)

  • BVCEO > 40V
  • IC = 200mA High Collector Current
  • Epitaxial Planar Die Construction
  • Ideal for Medium Power Amplification and Switching
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category Small Signal Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + NPN
VCEO, VCES (V) 40
IC (A) 0.2
ICM (A) -
PD (W) 0.15
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 30
hFE (@ IC2) (A) 0.1
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 300
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 300
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site