Diodes Incorporated — Analog and discrete power solutions
SOT363

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MMDT5451Q

Complementary, 160V, 0.2A, SOT363

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • Epitaxial Planar Die Construction
  • Complementary Pair 
  • Ideal for Medium Power Amplification and Switching
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The MMDT5451Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + PNP
VCEO, VCES (V) 160, 150
IC (A) 0.2
PD (W) 0.2
hFE (Min) 80, 60
hFE (@ IC) (A) 80,60
hFE(Min 2) 30, 50
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 150, 200
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 200, 500
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC