60V Dual N-Channel Self Protected Enhancement Mode IntelliFET MOSFET
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The ZXMS6006DN8 is a dual self-protected low-side IntelliFET® MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6006DN8 is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
AEC Qualified | Yes |
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Compliance (Only Automotive supports PPAP) | Automotive |
Configuration | Dual |
Polarity | N |
BVDSS (V) | 60 |
ID VIN = 5V (A) | 2.8 |
PD (W) | 1.67 |
RDS(ON) Max @ VIN (3V) (mΩ) | 125 |
RDS(ON) Max @VIN (5V) (mΩ) | 100 |
VDS(SC) VIN = 5V (V) | 16 |
EAS (mJ) | 210 |
TJ (°C) | 150 |