Diodes Incorporated — Analog and discrete power solutions
SO 8

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ZXMS6008DN8Q

60V Dual N-Channel Self-Protected Enhancement Mode IntelliFET MOSFET

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Description

The ZXMS6008DN8Q is a dual self-protected low-side IntelliFET® MOSFET with logic-level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6008DN8Q is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Feature(s)

  • Compact High Power Dissipation Package
  • Low Input Current
  • Logic-Level Input (3.3V and 5V)
  • Short-Circuit Protection with Auto Restart
  • Overvoltage Protection (Active Clamp)
  • Thermal Shutdown with Auto Restart
  • Overcurrent Protection
  • Input Protection (ESD)
  • High Continuous Current Rating
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The ZXMS6008DN8Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Lamp drivers
  • Motor drivers
  • Relay drivers
  • Solenoid drivers

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Configuration Dual
Polarity N
BVDSS (V) 60
ID VIN = 5V (A) 1.1
PD (W) 1.67
RDS(ON) Max @ VIN (3V) (mΩ) 800
RDS(ON) Max @VIN (5V) (mΩ) 700
VDS(SC) VIN = 5V (V) 36
EAS (mJ) 210
TJ (°C) 150

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf