Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT26-Chip-Image.pngComplementary, 20V, 4A, SOT26
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Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications
| Category | Low Saturation Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN + PNP |
| VCEO, VCES (V) | 20 |
| IC (A) | 4, 3.5 |
| ICM (A) | 10 |
| PD (W) | 1.1 |
| hFE (Min) | 280, 170 |
| hFE (@ IC) (A) | 1 |
| hFE(Min 2) | 140, 65 |
| hFE (@ IC2) (A) | 4, 3.5 |
| VCE(sat) Max (mV) | 75, 135 |
| VCE(SAT) (@ IC/IB) (A/mA) | 1/20 |
| VCE(sat) (Max.2) (mV) | 115, 280 |
| VCE(sat) (@ IC/IB2) (A/mA) | 2/40 |
| fT (MHz) | 215, 290 |
| RCE(sat) (mΩ) | 35, 54 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |
