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ZXTN2010Z

NPN, 60V, 5A, SOT89

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Feature(s)

  • BVCEO > 60V
  • IC = 5A High Continuous Current
  • RSAT = 30mΩ for a Low Equivalent On-Resistance
  • Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A
  • hFE Specified Up to 10A for High Current Gain Hold Up
  • Complementary PNP Type: ZXTP2012Z
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Emergency lighting circuits
  • Motor driving (including DC fans)
  • Backlight inverters
  • Power switches
  • Gate-driving MOSFETs and IGBTs

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 60
IC (A) 5
ICM (A) 20
PD (W) 2.1
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 55
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 30
VCE(SAT) (@ IC/IB) (A/mA) 0.1/5
VCE(sat) (Max.2) (mV) 125
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 130
RCE(sat) (mΩ) 30

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices