Diodes Incorporated — Analog and discrete power solutions
SOT23

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SOT23.png
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ZXTN2040F

NPN, 40V, 1A, SOT23

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Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Application(s)

  • Power MOSFET gate driving
  • Low loss power switching
  • Product Specifications

    Product Parameters

    Category Medium Power Transistor
    Compliance(Only Automotive supports PPAP) Standard
    Polarity NPN
    VCEO, VCES (V) 40
    IC (A) 1
    ICM (A) 2
    PD (W) 0.35
    hFE (Min) 300
    hFE (@ IC) (A) 0.001
    hFE(Min 2) 200
    hFE (@ IC2) (A) 1
    VCE(sat) Max (mV) 200
    VCE(SAT) (@ IC/IB) (A/mA) 0.1/1
    VCE(sat) (Max.2) (mV) 300
    VCE(sat) (@ IC/IB2) (A/mA) 0.5/50
    fT (MHz) 150
    RCE(sat) (mΩ) -

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Calculators

    MDS Reports

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)
    PCN-2330 2018-03-29 2018-07-29 Qualification of Additional A/T site and Conversion to Palladium Coated Copper Bond Wire on Select Discrete Products