Diodes Incorporated — Analog and discrete power solutions
Back to Transistor (BJT) Master Table

ZXTN619MA

NPN, 50V, 4A, DFN2020-3

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 50V
  • IC = 4A Continuous Collector Current
  • Low Saturation Voltage (100mV max @1A)
  • RSAT = 68mΩ for a Low Equivalent On-Resistance
  • hFE Specified up to 6A for High Current Gain Hold Up
  • Low Profile 0.6mm High Package for Thin Applications
  • RqJA Efficient, 60% Lower than SOT23
  • 4mm2 Footprint, 50% Smaller than SOT23
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • MOSFET gate driving
  • DC-DC converters
  • Charging circuits
  • Motor controls
  • Power switches

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 50
IC (A) 4
ICM (A) 6
PD (W) 1.5
hFE (Min) 300
hFE (@ IC) (A) 0.2
hFE(Min 2) 100
hFE (@ IC2) (A) 2
VCE(sat) Max (mV) 20
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 220
VCE(sat) (@ IC/IB2) (A/mA) 2/50
fT (MHz) 165
RCE(sat) (mΩ) 68

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf