PNP, 60V, 4A, SOT23
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Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Category | Low Saturation Transistor |
---|---|
Compliance(Only Automotive supports PPAP) | Standard |
Polarity | PNP |
VCEO, VCES (V) | 60 |
IC (A) | 4 |
ICM (A) | 10 |
PD (W) | 1 |
hFE (Min) | 100 |
hFE (@ IC) (A) | 0.01 |
hFE(Min 2) | 80 |
hFE (@ IC2) (A) | 4 |
VCE(sat) Max (mV) | 25 |
VCE(SAT) (@ IC/IB) (A/mA) | 0.1/10 |
VCE(sat) (Max.2) (mV) | 95 |
VCE(sat) (@ IC/IB2) (A/mA) | 2/200 |
fT (MHz) | 165 |
RCE(sat) (mΩ) | 45 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2305 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices |